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STGP30V60DF

IGBT 600V 60A 258W TO220AB


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGP30V60DF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 520
  • Description: IGBT 600V 60A 258W TO220AB (Kg)

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RFQ (Request for Quotations)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 20 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 258W
Base Part Number STGP30
Number of Elements 1
Element Configuration Single
Power Dissipation 258W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 53ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.35V
Turn On Time 59 ns
Test Condition 400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 30A
Turn Off Time-Nom (toff) 225 ns
IGBT Type Trench Field Stop
Gate Charge 163nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 45ns/189ns
Switching Energy 383μJ (on), 233μJ (off)
Gate-Emitter Voltage-Max 20V
Height 15.75mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet