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STGP35N35LZ

STGP35N35LZ datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGP35N35LZ
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 396
  • Description: STGP35N35LZ datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Turn On Time 7600 ns
Test Condition 300V, 15A, 5V
Vce(on) (Max) @ Vge, Ic 1.7V @ 4.5V, 15A
Turn Off Time-Nom (toff) 37000 ns
Gate Charge 49nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 1.1μs/26.5μs
Gate-Emitter Voltage-Max 12V
Gate-Emitter Thr Voltage-Max 2.3V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 2.299997g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature VOLTAGE CLAMPING
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 176W
Base Part Number STGP35
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Logic
Turn On Delay Time 1.1 μs
Power - Max 176W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 26.5 μs
Collector Emitter Voltage (VCEO) 1.7V
Max Collector Current 40A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 345V
Collector Emitter Saturation Voltage 1.7V
See Relate Datesheet