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STGP7NC60H

STGP7NC60H datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGP7NC60H
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 804
  • Description: STGP7NC60H datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 80W
Current Rating 14A
Base Part Number STGP7
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 80W
Input Type Standard
Turn On Delay Time 18.5 ns
Transistor Application POWER CONTROL
Rise Time 27ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 72 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 25A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Max Breakdown Voltage 600V
Turn On Time 25.5 ns
Test Condition 390V, 7A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 7A
Turn Off Time-Nom (toff) 221 ns
Gate Charge 35nC
Current - Collector Pulsed (Icm) 50A
Td (on/off) @ 25°C 18.5ns/72ns
Switching Energy 95μJ (on), 115μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet