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STGW15H120DF2

Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGW15H120DF2
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 513
  • Description: Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 32 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 259W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGW15
Element Configuration Single
Input Type Standard
Power - Max 259W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 30A
Reverse Recovery Time 231 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.1V
Test Condition 600V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 15A
IGBT Type Trench Field Stop
Gate Charge 67nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 23ns/111ns
Switching Energy 380μJ (on), 370μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
RoHS Status ROHS3 Compliant
See Relate Datesheet