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  • STGW20NC60VD

STGW20NC60VD

STGW20NC60VD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGW20NC60VD
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 211
  • Description: STGW20NC60VD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA FAST
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 200W
Current Rating 30A
Base Part Number STGW20
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Input Type Standard
Turn On Delay Time 31 ns
Transistor Application POWER CONTROL
Rise Time 11.5ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 100 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 44ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 42.5 ns
Test Condition 390V, 20A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Continuous Collector Current 30A
Turn Off Time-Nom (toff) 280 ns
Gate Charge 100nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 31ns/100ns
Switching Energy 220μJ (on), 330μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Height 20.15mm
Length 15.75mm
Width 5.15mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet