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  • STGW30NC120HD

STGW30NC120HD

STGW30NC120HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGW30NC120HD
  • Package: TO-247-3
  • Datasheet: -
  • Stock: 376
  • Description: STGW30NC120HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 220W
Current Rating 30A
Base Part Number STGW30
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 220W
Input Type Standard
Turn On Delay Time 29 ns
Transistor Application POWER CONTROL
Rise Time 11ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 275 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 60A
Reverse Recovery Time 152ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.75V
Turn On Time 41 ns
Test Condition 960V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 20A
Continuous Collector Current 30A
Turn Off Time-Nom (toff) 928 ns
Gate Charge 110nC
Td (on/off) @ 25°C 29ns/275ns
Switching Energy 1.66mJ (on), 4.44mJ (off)
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 5.75V
Height 20.15mm
Length 15.75mm
Width 5.15mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet