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  • STGW30NC60KD

STGW30NC60KD

STGW30NC60KD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGW30NC60KD
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 479
  • Description: STGW30NC60KD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature ULTRA FAST
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Base Part Number STGW30
Pin Count 3
Number of Elements 1
Element Configuration Single
Input Type Standard
Turn On Delay Time 29 ns
Power - Max 200W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 120 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 40 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 41 ns
Test Condition 480V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 20A
Turn Off Time-Nom (toff) 290 ns
Gate Charge 96nC
Current - Collector Pulsed (Icm) 125A
Td (on/off) @ 25°C 29ns/120ns
Switching Energy 350μJ (on), 435μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 20.15mm
Length 15.75mm
Width 5.15mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Through Hole
See Relate Datesheet