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  • STGW30NC60VD

STGW30NC60VD

STGW30NC60VD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGW30NC60VD
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 812
  • Description: STGW30NC60VD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Base Part Number STGW30
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 250W
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 11ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Reverse Recovery Time 44ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 42.5 ns
Test Condition 390V, 20A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Turn Off Time-Nom (toff) 280 ns
Gate Charge 100nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 31ns/100ns
Switching Energy 220μJ (on), 330μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Height 21.07mm
Length 16.02mm
Width 5.15mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet