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STGW35HF60W

STGW35HF60W datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGW35HF60W
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 160
  • Description: STGW35HF60W datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Base Part Number STGW35
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Input Type Standard
Turn On Delay Time 30 ns
Power - Max 200W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 175 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 45 ns
Test Condition 400V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Turn Off Time-Nom (toff) 295 ns
Gate Charge 140nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 30ns/175ns
Switching Energy 290μJ (on), 185μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Active
See Relate Datesheet