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STGW35NB60S

STGW35NB60S datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGW35NB60S
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 390
  • Description: STGW35NB60S datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Gate Charge 83nC
Current - Collector Pulsed (Icm) 250A
Td (on/off) @ 25°C 92ns/1.1μs
Switching Energy 840μJ (on), 7.4mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Base Part Number STGW35
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection ISOLATED
Input Type Standard
Power - Max 200W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 70A
Collector Emitter Breakdown Voltage 600V
Turn On Time 153 ns
Test Condition 480V, 20A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 20A
Turn Off Time-Nom (toff) 3600 ns
See Relate Datesheet