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  • STGW35NB60SD

STGW35NB60SD

STGW35NB60SD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGW35NB60SD
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 202
  • Description: STGW35NB60SD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 200W
Current Rating 35A
Base Part Number STGW35
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 70ns
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 70A
Reverse Recovery Time 44 ns
Continuous Drain Current (ID) 70A
JEDEC-95 Code TO-247AA
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.7V
Max Breakdown Voltage 600V
Turn On Time 153 ns
Test Condition 480V, 20A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 20A
Turn Off Time-Nom (toff) 3600 ns
Gate Charge 83nC
Current - Collector Pulsed (Icm) 250A
Td (on/off) @ 25°C 92ns/1.1μs
Switching Energy 840μJ (on), 7.4mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Height 20.15mm
Length 15.75mm
Width 5.15mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
See Relate Datesheet