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STGW35NC120HD

STGW35NC120HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGW35NC120HD
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 787
  • Description: STGW35NC120HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 235W
Base Part Number STGW35
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Input Type Standard
Turn On Delay Time 29 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 275 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 58A
Reverse Recovery Time 152 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 60A
Turn On Time 41 ns
Test Condition 960V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 20A
Turn Off Time-Nom (toff) 928 ns
Gate Charge 110nC
Current - Collector Pulsed (Icm) 135A
Td (on/off) @ 25°C 29ns/275ns
Switching Energy 1.66mJ (on), 4.44mJ (off)
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 5.75V
Height 21.09mm
Length 16.03mm
Width 5.16mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet