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STGW40S120DF3

STGW40S120DF3 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGW40S120DF3
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 297
  • Description: STGW40S120DF3 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 468W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.15V
Max Collector Current 80A
Reverse Recovery Time 355 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 50 ns
Test Condition 600V, 40A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 40A
Turn Off Time-Nom (toff) 158.46 ns
IGBT Type Trench Field Stop
Gate Charge 129nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 35ns/148ns
Switching Energy 1.43mJ (on), 3.83mJ (off)
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 41 Weeks
Mount Surface Mount
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 468W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGW40
See Relate Datesheet