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STGW60H65DF

STGW60H65DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGW60H65DF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 967
  • Description: STGW60H65DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 32 Weeks
Lifecycle Status NRND (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 360W
Base Part Number STGW60
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Input Type Standard
Turn On Delay Time 67 ns
Power - Max 360W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 165 ns
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 120A
Reverse Recovery Time 62 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 2.1V
Turn On Time 113 ns
Test Condition 400V, 60A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 60A
Turn Off Time-Nom (toff) 247 ns
IGBT Type Trench Field Stop
Gate Charge 206nC
Current - Collector Pulsed (Icm) 240A
Td (on/off) @ 25°C 67ns/165ns
Switching Energy 1.5mJ (on), 1.1mJ (off)
Gate-Emitter Voltage-Max 20V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet