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  • STGWT80H65FB

STGWT80H65FB

STGWT80H65FB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGWT80H65FB
  • Package: TO-3P-3, SC-65-3
  • Datasheet: PDF
  • Stock: 937
  • Description: STGWT80H65FB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 32 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.756003g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 469W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGWT80
Element Configuration Single
Input Type Standard
Power - Max 469W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 120A
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.6V
Test Condition 400V, 80A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 80A
IGBT Type Trench Field Stop
Gate Charge 414nC
Current - Collector Pulsed (Icm) 240A
Td (on/off) @ 25°C 84ns/280ns
Switching Energy 2.1mJ (on), 1.5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
Height 20.1mm
Length 15.8mm
Width 5mm
RoHS Status ROHS3 Compliant
See Relate Datesheet