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  • STGY50NC60WD

STGY50NC60WD

STGY50NC60WD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGY50NC60WD
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 972
  • Description: STGY50NC60WD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 278W
Base Part Number STGY50
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 260W
Input Type Standard
Turn On Delay Time 52 ns
Power - Max 278W
Transistor Application POWER CONTROL
Rise Time 17ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 240 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 110A
Reverse Recovery Time 55 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 69 ns
Test Condition 390V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 40A
Turn Off Time-Nom (toff) 271 ns
Gate Charge 195nC
Current - Collector Pulsed (Icm) 180A
Td (on/off) @ 25°C 52ns/240ns
Switching Energy 365μJ (on), 560μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Height 20.3mm
Length 15.9mm
Width 5.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 247
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
See Relate Datesheet