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  • STH12N120K5-2

STH12N120K5-2

MOSFET N-CH 1200V 12A H2PAK-2


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STH12N120K5-2
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 489
  • Description: MOSFET N-CH 1200V 12A H2PAK-2 (Kg)

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Details

Tags

Parameters
Factory Lead Time 26 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Manufacturer Package Identifier H2PAK-2-8159712
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series MDmesh™ K5
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STH12N
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 250W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 250W
Case Connection DRAIN
Turn On Delay Time 23 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 690m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1370pF @ 100V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 44.2nC @ 10V
Rise Time 11ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 18.5 ns
Turn-Off Delay Time 68.5 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.69Ohm
Drain to Source Breakdown Voltage 1.2kV
Pulsed Drain Current-Max (IDM) 48A
Max Junction Temperature (Tj) 150°C
Height 5mm
RoHS Status ROHS3 Compliant
See Relate Datesheet