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STI42N65M5

MOSFET N-CH 650V 33A I2PAK


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STI42N65M5
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 242
  • Description: MOSFET N-CH 650V 33A I2PAK (Kg)

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Shipping Cost

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 4650pF @ 100V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Rise Time 24ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 33A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.079Ohm
Drain to Source Breakdown Voltage 650V
Avalanche Energy Rating (Eas) 950 mJ
Nominal Vgs 4 V
Height 9.35mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh™ V
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STI42N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 190W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 190W
Turn On Delay Time 61 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 79m Ω @ 16.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
See Relate Datesheet