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  • STL18NM60N

STL18NM60N

MOSFET N-CH 600V 6A POWERFLAT


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STL18NM60N
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 709
  • Description: MOSFET N-CH 600V 6A POWERFLAT (Kg)

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Details

Tags

Parameters
Lifecycle Status NRND (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series MDmesh™ II
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 5
ECCN Code EAR99
Resistance 310mOhm
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Base Part Number STL18
Pin Count 5
Number of Elements 1
Power Dissipation-Max 3W Ta 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 310m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 50V
Current - Continuous Drain (Id) @ 25°C 2.1A Ta 12A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 2.1A
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 8.4A
Height 950μm
Length 8mm
Width 8mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet