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STL19N65M5

MOSFET N-CH 650V 12.5A POWERFLAT


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STL19N65M5
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 287
  • Description: MOSFET N-CH 650V 12.5A POWERFLAT (Kg)

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Details

Tags

Parameters
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series MDmesh™ V
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 4
ECCN Code EAR99
Resistance 215mOhm
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STL19
JESD-30 Code S-PSSO-N4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.8W Ta 90W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 36 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 240m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1240pF @ 100V
Current - Continuous Drain (Id) @ 25°C 2.3A Ta 12.5A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 7ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 12.5A
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 2.3A
Drain to Source Breakdown Voltage 710V
Pulsed Drain Current-Max (IDM) 50A
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
See Relate Datesheet