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STL60P4LLF6

STL60P4LLF6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STL60P4LLF6
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 262
  • Description: STL60P4LLF6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature 175°C TJ
Packaging Cut Tape (CT)
Series STripFET™ F6
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STL60
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 100W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 49.4 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds 3525pF @ 25V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 34nC @ 4.5V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 170 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.019Ohm
Pulsed Drain Current-Max (IDM) 240A
DS Breakdown Voltage-Min 40V
Height 950μm
Length 6.35mm
Width 5.4mm
RoHS Status ROHS3 Compliant
See Relate Datesheet