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STP14NM50N

STP14NM50N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STP14NM50N
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 909
  • Description: STP14NM50N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 320m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 816pF @ 50V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 3V
Factory Lead Time 16 Weeks
JEDEC-95 Code TO-220AB
Mount Through Hole
Mounting Type Through Hole
Gate to Source Voltage (Vgs) 25V
Package / Case TO-220-3
Number of Pins 3
Drain to Source Breakdown Voltage 500V
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Pulsed Drain Current-Max (IDM) 48A
Packaging Tube
Series MDmesh™ II
Height 15.75mm
JESD-609 Code e3
Part Status Active
Length 10.4mm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Width 4.6mm
Number of Terminations 3
ECCN Code EAR99
Radiation Hardening No
Resistance 320mOhm
REACH SVHC No SVHC
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
RoHS Status ROHS3 Compliant
Technology MOSFET (Metal Oxide)
Lead Free Lead Free
Terminal Position SINGLE
Base Part Number STP14N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 90W Tc
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 90W
Turn On Delay Time 10.2 ns
See Relate Datesheet