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STP18N65M2

MOSFET N-CH 650V 12A TO220


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STP18N65M2
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 570
  • Description: MOSFET N-CH 650V 12A TO220 (Kg)

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RFQ (Request for Quotations)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh™ M2
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STP18N
Power Dissipation-Max 110W Tc
Element Configuration Single
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 330m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 100V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 25V
Height 15.75mm
Length 10.4mm
Width 4.6mm
RoHS Status ROHS3 Compliant
See Relate Datesheet