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  • STP18NM60N

STP18NM60N

STP18NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STP18NM60N
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 855
  • Description: STP18NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Width 4.6mm
Radiation Hardening No
Series MDmesh™ II
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Part Status Active
Lead Free Lead Free
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 285mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STP18N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 285m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 50V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 55 ns
Factory Lead Time 16 Weeks
Continuous Drain Current (ID) 13A
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Mount Through Hole
Gate to Source Voltage (Vgs) 25V
Mounting Type Through Hole
Package / Case TO-220-3
Drain to Source Breakdown Voltage 600V
Number of Pins 3
Pulsed Drain Current-Max (IDM) 52A
Transistor Element Material SILICON
Height 15.75mm
Operating Temperature -55°C~150°C TJ
Length 10.4mm
Packaging Tube
See Relate Datesheet