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  • STP270N8F7

STP270N8F7

Trans MOSFET N-CH 80V 180A 3-Pin(3+Tab) TO-220AB Tube


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STP270N8F7
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 728
  • Description: Trans MOSFET N-CH 80V 180A 3-Pin(3+Tab) TO-220AB Tube (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series DeepGATE™, STripFET™ VII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 2.1MOhm
Additional Feature ULTRA LOW RESISTANCE
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Base Part Number STP270
Number of Elements 1
Power Dissipation-Max 315W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 315W
Case Connection DRAIN
Turn On Delay Time 56 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13600pF @ 50V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 193nC @ 10V
Rise Time 180ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 42 ns
Turn-Off Delay Time 98 ns
Continuous Drain Current (ID) 180A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 720A
Height 15.75mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet