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STP55NF06

STP55NF06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STP55NF06
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 235
  • Description: STP55NF06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series STripFET™ II
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 18mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 50A
Base Part Number STP55N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 30W
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 27.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 50ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 50A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 55A
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 200A
Dual Supply Voltage 60V
Nominal Vgs 3 V
Height 9.15mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet