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STP9NM60N

MOSFET N-CH 600V 6.5A TO-220


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STP9NM60N
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 685
  • Description: MOSFET N-CH 600V 6.5A TO-220 (Kg)

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Details

Tags

Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STP9N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 70W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
Turn On Delay Time 28 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 745m Ω @ 3.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 452pF @ 50V
Current - Continuous Drain (Id) @ 25°C 6.5A Tc
Gate Charge (Qg) (Max) @ Vgs 17.4nC @ 10V
Rise Time 23ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 26.7 ns
Turn-Off Delay Time 52.5 ns
Continuous Drain Current (ID) 6.5A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 9A
Drain-source On Resistance-Max 0.745Ohm
Pulsed Drain Current-Max (IDM) 26A
DS Breakdown Voltage-Min 600V
Height 15.75mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Lifecycle Status NRND (Last Updated: 7 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh™ II
JESD-609 Code e3
Part Status Active
See Relate Datesheet