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STQ1HNK60R-AP

Trans MOSFET N-CH 600V 0.4A 3-Pin TO-92 Ammo


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STQ1HNK60R-AP
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: PDF
  • Stock: 887
  • Description: Trans MOSFET N-CH 600V 0.4A 3-Pin TO-92 Ammo (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Series SuperMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form WIRE
Base Part Number STQ1
Pin Count 3
Number of Elements 1
Power Dissipation-Max 3W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Turn On Delay Time 6.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 156pF @ 25V
Current - Continuous Drain (Id) @ 25°C 400mA Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Rise Time 5ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 500mA
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 0.4A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 25 mJ
Height 4.95mm
Length 4.95mm
Width 3.94mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet