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STQ1NK60ZR-AP

MOSFET N-CH 600V 0.3A TO-92


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STQ1NK60ZR-AP
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: PDF
  • Stock: 716
  • Description: MOSFET N-CH 600V 0.3A TO-92 (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Series SuperMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Base Part Number STQ1
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Turn On Delay Time 5.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15 Ω @ 400mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 94pF @ 25V
Current - Continuous Drain (Id) @ 25°C 300mA Tc
Gate Charge (Qg) (Max) @ Vgs 6.9nC @ 10V
Rise Time 5ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 400mA
Threshold Voltage 3.75V
Gate to Source Voltage (Vgs) 30V
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 60 mJ
Height 6.35mm
Length 31.75mm
Width 12.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet