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  • STU10N60M2

STU10N60M2

MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STU10N60M2
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 638
  • Description: MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2 (Kg)

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Details

Tags

Parameters
Factory Lead Time 26 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh™ II Plus
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Base Part Number STU10N
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 85W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 8.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 100V
Current - Continuous Drain (Id) @ 25°C 7.5A Tc
Gate Charge (Qg) (Max) @ Vgs 13.5nC @ 10V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 13.2 ns
Turn-Off Delay Time 32.5 ns
Continuous Drain Current (ID) 7.5A
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.6Ohm
Drain to Source Breakdown Voltage 600V
Height 6.2mm
Length 6.6mm
Width 2.4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet