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STU2N62K3

MOSFET N-Ch 620V 3 Ohm 2.2A SuperMESH


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STU2N62K3
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 465
  • Description: MOSFET N-Ch 620V 3 Ohm 2.2A SuperMESH (Kg)

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Details

Tags

Parameters
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.6 Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 50V
Current - Continuous Drain (Id) @ 25°C 2.2A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 4.4ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 2.2A
Threshold Voltage 3.75V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 620V
Pulsed Drain Current-Max (IDM) 8.8A
Avalanche Energy Rating (Eas) 85 mJ
Height 6.9mm
Length 6.6mm
Width 2.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Series SuperMESH3™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 3.6Ohm
Additional Feature ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Base Part Number STU2N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 45W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 45W
Turn On Delay Time 8 ns
FET Type N-Channel
See Relate Datesheet