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  • STU5N62K3

STU5N62K3

MOSFET N-Ch 620V 1.28 Ohm 4.2A SuperMESH 3


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STU5N62K3
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 806
  • Description: MOSFET N-Ch 620V 1.28 Ohm 4.2A SuperMESH 3 (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH3™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.6Ohm
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature ULTRA LOW-ON RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Base Part Number STU5N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 70W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6 Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 50V
Current - Continuous Drain (Id) @ 25°C 4.2A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 4.2A
Threshold Voltage 3.75V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 620V
Pulsed Drain Current-Max (IDM) 16.8A
Avalanche Energy Rating (Eas) 120 mJ
Height 6.9mm
Length 6.6mm
Width 2.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet