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STW23NM50N
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Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The
basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and
country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 1330pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 17A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Rise Time | 19ns |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 29 ns |
| Turn-Off Delay Time | 71 ns |
| Continuous Drain Current (ID) | 17A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 25V |
| Pulsed Drain Current-Max (IDM) | 68A |
| DS Breakdown Voltage-Min | 500V |
| Avalanche Energy Rating (Eas) | 254 mJ |
| Height | 20.15mm |
| Length | 15.75mm |
| Width | 5.15mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Series | MDmesh™ II |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 190mOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Base Part Number | STW23N |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 125W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 125W |
| Turn On Delay Time | 6.6 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 190m Ω @ 8.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
See Relate Datesheet