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STW26NM50

STW26NM50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STW26NM50
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 830
  • Description: STW26NM50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Gate Charge (Qg) (Max) @ Vgs 106nC @ 10V
Lifecycle Status NRND (Last Updated: 8 months ago)
Contact Plating Tin
Mount Through Hole
Rise Time 15ns
Mounting Type Through Hole
Package / Case TO-247-3
Drive Voltage (Max Rds On,Min Rds On) 10V
Number of Pins 3
Weight 9.071847g
Transistor Element Material SILICON
Vgs (Max) ±30V
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh™
Fall Time (Typ) 19 ns
JESD-609 Code e3
Turn-Off Delay Time 13 ns
Part Status Not For New Designs
Continuous Drain Current (ID) 30A
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Threshold Voltage 3V
Number of Terminations 3
ECCN Code EAR99
Gate to Source Voltage (Vgs) 30V
Resistance 120mOhm
Drain Current-Max (Abs) (ID) 26A
Subcategory FET General Purpose Power
Drain to Source Breakdown Voltage 500V
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Avalanche Energy Rating (Eas) 740 mJ
Max Junction Temperature (Tj) 150°C
Current Rating 30A
Base Part Number STW26N
Height 24.45mm
Pin Count 3
Length 15.75mm
Number of Elements 1
Width 5.15mm
Number of Channels 1
Radiation Hardening No
Power Dissipation-Max 313W Tc
REACH SVHC No SVHC
Element Configuration Single
RoHS Status ROHS3 Compliant
Operating Mode ENHANCEMENT MODE
Lead Free Lead Free
Power Dissipation 313W
Turn On Delay Time 28 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 120m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
See Relate Datesheet