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STW26NM60ND

MOSFET N-CH 600V 21A TO247


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STW26NM60ND
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 384
  • Description: MOSFET N-CH 600V 21A TO247 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Series FDmesh™ II
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Base Part Number STW26N
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 190W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 175m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1817pF @ 100V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 54.6nC @ 10V
Rise Time 14.5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 27.5 ns
Turn-Off Delay Time 69 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 84A
Height 20.15mm
Length 15.75mm
Width 5.15mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet