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STW33N60DM2

STMICROELECTRONICS STW33N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STW33N60DM2
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 283
  • Description: STMICROELECTRONICS STW33N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V (Kg)

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Details

Tags

Parameters
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh™ DM2
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STW33N
Power Dissipation-Max 190W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 130m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1870pF @ 100V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Continuous Drain Current (ID) 24A
Threshold Voltage 4V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet