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  • STW4N150

STW4N150

MOSFET N-CH 1500V 4A TO-247


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STW4N150
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 766
  • Description: MOSFET N-CH 1500V 4A TO-247 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 7Ohm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 1.5kV
Technology MOSFET (Metal Oxide)
Current Rating 4A
Base Part Number STW4N
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 160W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 160W
Case Connection ISOLATED
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time 30ns
Drain to Source Voltage (Vdss) 1500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 4A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage 1.5kV
Max Junction Temperature (Tj) 150°C
Height 24.45mm
Length 15.75mm
Width 5.15mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet