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  • STW56N65DM2

STW56N65DM2

STMICROELECTRONICS STW56N65DM2 Power MOSFET, N Channel, 49 A, 650 V, 0.049 ohm, 10 V, 3 V


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STW56N65DM2
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 783
  • Description: STMICROELECTRONICS STW56N65DM2 Power MOSFET, N Channel, 49 A, 650 V, 0.049 ohm, 10 V, 3 V (Kg)

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Details

Tags

Parameters
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh™ DM2
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STW56N
Power Dissipation-Max 360W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 65m Ω @ 24A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 100V
Current - Continuous Drain (Id) @ 25°C 48A Tc
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Continuous Drain Current (ID) 48A
Threshold Voltage 3V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet