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STW57N65M5-4

MOSFET N CH 650V 42A TO247-4


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STW57N65M5-4
  • Package: TO-247-4
  • Datasheet: PDF
  • Stock: 361
  • Description: MOSFET N CH 650V 42A TO247-4 (Kg)

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IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 26 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-4
Number of Pins 4
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh™ V
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Base Part Number STW57N
Power Dissipation-Max 250W Tc
Element Configuration Single
Turn On Delay Time 79 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 63m Ω @ 21A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 100V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 42A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 650V
Height 21.1mm
Length 15.9mm
Width 5.1mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet