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  • STW70N60M2

STW70N60M2

STW70N60M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STW70N60M2
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 695
  • Description: STW70N60M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh™ II Plus
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Base Part Number STW70N
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 450W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 450W
Turn On Delay Time 32 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 34A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 100V
Current - Continuous Drain (Id) @ 25°C 68A Tc
Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V
Rise Time 17ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 155 ns
Continuous Drain Current (ID) 68A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.04Ohm
Pulsed Drain Current-Max (IDM) 272A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 9000 mJ
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet