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  • STW88N65M5

STW88N65M5

STW88N65M5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STW88N65M5
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 205
  • Description: STW88N65M5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Technology MOSFET (Metal Oxide)
Radiation Hardening No
REACH SVHC No SVHC
Base Part Number STW88N
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 450W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 450W
Case Connection DRAIN
Turn On Delay Time 141 ns
FET Type N-Channel
Factory Lead Time 17 Weeks
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 29m Ω @ 42A, 10V
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Contact Plating Tin
Vgs(th) (Max) @ Id 5V @ 250μA
Mount Through Hole
Input Capacitance (Ciss) (Max) @ Vds 8825pF @ 100V
Mounting Type Through Hole
Package / Case TO-247-3
Current - Continuous Drain (Id) @ 25°C 84A Tc
Number of Pins 3
Gate Charge (Qg) (Max) @ Vgs 204nC @ 10V
Transistor Element Material SILICON
Drive Voltage (Max Rds On,Min Rds On) 10V
Operating Temperature 150°C TJ
Vgs (Max) ±25V
Packaging Tube
Turn-Off Delay Time 141 ns
Series MDmesh™ V
Continuous Drain Current (ID) 84A
Threshold Voltage 4V
JESD-609 Code e3
Part Status Active
Gate to Source Voltage (Vgs) 25V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Drain to Source Breakdown Voltage 650V
Avalanche Energy Rating (Eas) 2000 mJ
Number of Terminations 3
Max Junction Temperature (Tj) 150°C
ECCN Code EAR99
Nominal Vgs 4 V
Resistance 24mOhm
Height 24.45mm
Length 15.75mm
Subcategory FET General Purpose Power
Width 5.15mm
See Relate Datesheet