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  • STW9N150

STW9N150

STW9N150 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STW9N150
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 850
  • Description: STW9N150 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Vgs (Max) ±30V
Fall Time (Typ) 52 ns
Turn-Off Delay Time 86 ns
Continuous Drain Current (ID) 8A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage 1.5kV
Avalanche Energy Rating (Eas) 720 mJ
Max Junction Temperature (Tj) 150°C
Factory Lead Time 12 Weeks
Height 24.45mm
Length 15.75mm
Width 5.15mm
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Radiation Hardening No
Mount Through Hole
REACH SVHC No SVHC
Mounting Type Through Hole
RoHS Status ROHS3 Compliant
Package / Case TO-247-3
Lead Free Lead Free
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 2.5Ohm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STW9N
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 320W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 320W
Turn On Delay Time 41 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5 Ω @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3255pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 89.3nC @ 10V
Rise Time 14.7ns
Drain to Source Voltage (Vdss) 1500V
Drive Voltage (Max Rds On,Min Rds On) 10V
See Relate Datesheet