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  • SUD06N10-225L-E3

SUD06N10-225L-E3

MOSFET N-CH 100V 6.5A DPAK


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SUD06N10-225L-E3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 443
  • Description: MOSFET N-CH 100V 6.5A DPAK (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package TO-252, (D-Pak)
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 200mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 1.25W Ta 20W Tc
Element Configuration Single
Power Dissipation 20W
Turn On Delay Time 7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 200mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.5A Tc
Gate Charge (Qg) (Max) @ Vgs 4nC @ 5V
Rise Time 8ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 8 ns
Continuous Drain Current (ID) 6.5A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Input Capacitance 240pF
Drain to Source Resistance 200mOhm
Rds On Max 200 mΩ
Nominal Vgs 1 V
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet