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SUD06N10-225L-GE3

MOSFET 100V 0.20ohm@10V 6.5A N-CH


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SUD06N10-225L-GE3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 748
  • Description: MOSFET 100V 0.20ohm@10V 6.5A N-CH (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1995
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 200mOhm
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SUD06N10
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.25W Ta 16.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 200m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.5A Tc
Gate Charge (Qg) (Max) @ Vgs 4nC @ 5V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 8 ns
Continuous Drain Current (ID) 6.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 8A
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet