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  • SUD50N04-8M8P-4GE3

SUD50N04-8M8P-4GE3

MOSFET 40V 50A 48.1W 8.8mohm @ 10V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SUD50N04-8M8P-4GE3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 795
  • Description: MOSFET 40V 50A 48.1W 8.8mohm @ 10V (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 8.8mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.1W Ta 48.1W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 48.1W
Case Connection DRAIN
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 20V
Current - Continuous Drain (Id) @ 25°C 14A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 14A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 50A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 45 mJ
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet