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  • SUD50P10-43L-E3

SUD50P10-43L-E3

MOSFET P-CH 100V 37.1A TO252


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SUD50P10-43L-E3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 396
  • Description: MOSFET P-CH 100V 37.1A TO252 (Kg)

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Details

Tags

Parameters
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 8.3W Ta 136W Tc
Factory Lead Time 14 Weeks
Element Configuration Single
Contact Plating Tin
Operating Mode ENHANCEMENT MODE
Mount Surface Mount
Mounting Type Surface Mount
Power Dissipation 8.3W
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Case Connection DRAIN
Number of Pins 3
Turn On Delay Time 15 ns
Weight 1.437803g
FET Type P-Channel
Transistor Element Material SILICON
Transistor Application SWITCHING
Operating Temperature -55°C~175°C TJ
Rds On (Max) @ Id, Vgs 43m Ω @ 9.2A, 10V
Packaging Tape & Reel (TR)
Vgs(th) (Max) @ Id 3V @ 250μA
Published 2013
Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 50V
Series TrenchFET®
Current - Continuous Drain (Id) @ 25°C 37.1A Tc
JESD-609 Code e3
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Rise Time 160ns
Drain to Source Voltage (Vdss) 100V
Pbfree Code yes
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Part Status Active
Vgs (Max) ±20V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Fall Time (Typ) 100 ns
Number of Terminations 2
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) -9.2A
Threshold Voltage -3V
ECCN Code EAR99
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Resistance 43mOhm
Pulsed Drain Current-Max (IDM) 40A
Max Junction Temperature (Tj) 175°C
Height 2.507mm
Length 6.73mm
Subcategory Other Transistors
Width 6.22mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Technology MOSFET (Metal Oxide)
Lead Free Lead Free
Terminal Form GULL WING
See Relate Datesheet