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  • SUM110P06-08L-E3

SUM110P06-08L-E3

MOSFET P-CH 60V 110A D2PAK


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SUM110P06-08L-E3
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 627
  • Description: MOSFET P-CH 60V 110A D2PAK (Kg)

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Shipping Cost

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Shipping Method

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Drain to Source Resistance 6.5mOhm
Rds On Max 8 mΩ
Height 5.08mm
Length 10.41mm
Width 9.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package TO-263 (D2Pak)
Weight 1.437803g
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 8MOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.75W Ta 272W Tc
Element Configuration Single
Power Dissipation 3.75W
Turn On Delay Time 20 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Rise Time 190ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 300 ns
Turn-Off Delay Time 140 ns
Continuous Drain Current (ID) -110A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Input Capacitance 9.2nF
Max Junction Temperature (Tj) 175°C
See Relate Datesheet