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  • SUM60N10-17-E3

SUM60N10-17-E3

MOSFET N-CH 100V 60A D2PAK


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SUM60N10-17-E3
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 320
  • Description: MOSFET N-CH 100V 60A D2PAK (Kg)

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Shipping Cost

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Shipping Method

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Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 16.5mOhm
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.75W Ta 150W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.75W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16.5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 80 mJ
Turn Off Time-Max (toff) 60ns
Height 4.83mm
Length 10.41mm
Width 9.65mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet