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  • SUP90P06-09L-E3

SUP90P06-09L-E3

Trans MOSFET P-CH 60V 90A 3-Pin(3+Tab) TO-220AB


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SUP90P06-09L-E3
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 773
  • Description: Trans MOSFET P-CH 60V 90A 3-Pin(3+Tab) TO-220AB (Kg)

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Details

Tags

Parameters
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Rise Time 190ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 300 ns
Turn-Off Delay Time 140 ns
Continuous Drain Current (ID) 90A
Threshold Voltage -1V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 200A
Max Junction Temperature (Tj) 175°C
Height 19.31mm
Length 10.41mm
Width 4.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 9.3mOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.4W Ta 250W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.4W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.3m Ω @ 30A, 10V
See Relate Datesheet