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  • TN2524N8-G

TN2524N8-G

Trans MOSFET N-CH 240V 0.36A 4-Pin(3+Tab) SOT-89


  • Manufacturer: Microchip Technology
  • Origchip NO: 536-TN2524N8-G
  • Package: TO-243AA
  • Datasheet: PDF
  • Stock: 100
  • Description: Trans MOSFET N-CH 240V 0.36A 4-Pin(3+Tab) SOT-89 (Kg)

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Details

Tags

Parameters
Rds On (Max) @ Id, Vgs 6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 125pF @ 25V
Current - Continuous Drain (Id) @ 25°C 360mA Tj
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 360mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.36A
Drain-source On Resistance-Max 6Ohm
Drain to Source Breakdown Voltage 240V
Pulsed Drain Current-Max (IDM) 2A
Height 1.6mm
Length 4.6mm
Width 2.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 6 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 52.786812mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PSSO-F3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.6W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
See Relate Datesheet